SHORT-CAVITY GAALAS LASER BY WET CHEMICAL ETCHINGBOUADMA N; RIOU J; BOULEY JC et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 20; PP. 879-880; BIBL. 8 REF.Article

GaAs/AlGaAs ridge waveguide laser monolithically integrated with a photodetector using ion beam etchingBOUADMA, N; GROSMAIRE, S; BRILLOUET, F et al.Electronics Letters. 1987, Vol 23, Num 16, pp 855-857, issn 0013-5194Article

Composants actifs pour le réseau d'accès = Active components for the access networkBOUADMA, N; NAKAJIMA, H; WIN, P et al.Echo des recherches (Ed. française). 1997, Num 168-69, pp 55-62, issn 0012-9283, 71 [9 p.]Article

Over 245 mW 1.3 μm buried ridge stripe laser diodes on n-substrate fabricated by the reactive ion beam etching techniqueBOUADMA, N; KAZMIERSKI, C; SEMO, J et al.Applied physics letters. 1991, Vol 59, Num 1, pp 22-24, issn 0003-6951Article

Ion beam etching and surface characterization of indium phosphideBOUADMA, N; DEVOLDERE, P; JUSSERAND, B et al.Applied physics letters. 1986, Vol 48, Num 19, pp 1285-1287, issn 0003-6951Article

Experimental evidence of facet position influence on DFB laser gain discriminationCORREC, P; BOUADMA, N; LANDREAU, J et al.Optics communications. 1988, Vol 65, Num 6, pp 433-436, issn 0030-4018Article

Monolithic integrated four DFB lasers array with a polymer-based combiner for WDM applicationsTOUSSAERE, E; BOUADMA, N; ZYSS, J et al.Optical materials (Amsterdam). 1998, Vol 9, Num 1-4, pp 255-258, issn 0925-3467Conference Paper

Low-threshold GaAs/GaAlAs buried heterostructure laser with an ion-beam-etched quarter ring cavitySANSONETTI, P; RIBOT, H; BRANDON, J et al.Electronics Letters. 1987, Vol 23, Num 10, pp 485-487, issn 0013-5194Article

Integration of a laser diode with a polymer-based waveguide for photoni integrated circuitsBOUADMA, N; LIANG, J; LEVENSON, R et al.IEEE photonics technology letters. 1994, Vol 6, Num 10, pp 1188-1190, issn 1041-1135Article

Monolithic integration of GaAs/GaAlAs buried-heterostructure orthogonal facet laser and optical waveguideRIBOT, H; SANSONETTI, P; BRANDON, J et al.Applied physics letters. 1989, Vol 54, Num 6, pp 475-477, issn 0003-6951, 3 p.Article

Strained multi-quantum well heterostructures for lasers, modulators and integrated optical devices at 1.3-1.55 μmMIRCEA, A; OUGAZZADEN, A; BOUADMA, N et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 28, Num 1-3, pp 279-283, issn 0921-5107Conference Paper

Picosecond (<2.5 ps) wavelength-tunable (∼20 nm) semiconductor laser pulses with repetition rates up to 12 GHzCAVELIER, M; STELMAKH, N; XIE, J. M et al.Electronics Letters. 1992, Vol 28, Num 3, pp 224-226, issn 0013-5194Article

Polarization-independent filtering in a grating-assisted horizontal directional couplerFRANCOIS, S; FOUCHET, S; BOUADMA, N et al.IEEE photonics technology letters. 1995, Vol 7, Num 7, pp 780-782, issn 1041-1135Article